Abstract
Molecular layer deposition (MLD) of metal oxide and organic hybrid thin films has great potential to be utilized in extreme ultraviolet photoresist, thanks to its excellent uniformity on the nanometer scale thickness control. Zn has large photoelectron effect cross-section, resulting in lots of secondary electrons, which can break the organic bonds, causing changes in solubility upon the ultraviolet (UV) light exposure. In this work, Zn-based MLD thin films have been demonstrated for their potential to be used as photoresist for extreme ultraviolet (EUV) application. UV light exposure mechanisms have been proposed based on X-ray photoelectron spectroscopy (XPS) analysis.
Published Version
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