Abstract
Defect source reduction in Extreme Ultraviolet (EUV) photoresists is a critical requirement to improve device performance and overall yield for a seamless transition to high volume manufacturing, especially for technologies in the 3 nm node and beyond. This is particularly true considering the increased influence of stochastic imaging defectivity in EUV relative to prior lithographic technologies. Filtration is one of the key enabling technologies to maintain a material’s purity and therefore enhance process performance, beginning when the photoresist is manufactured, and continuing until the photoresist is dispensed on a wafer. We have previously presented a novel filtration technology development to maximize filtration efficiency for specific contamination sources and reduce defectivity in EUV photoresists. In this paper, further results and possible defect reduction mechanisms will be updated and discussed to address stochastic issues, specially variability of polymer molecular weight distribution in EUV CAR (Chemically Amplified Resists) photoresists.
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