Abstract
Study of negative differential switching behavior is reported in metal-insulator-p-n thyristor structure with a GaAs native thin oxide, where the thin insulator is grown at low temperature by a chemical liquid phase oxide (CLPO) with a thickness at 10nm range. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface and p-n junction. The influence of oxide thickness on the switching characteristics is investigated. The switching voltages are found to be increased when increasing the oxide thickness, while the holding voltages are almost kept constant even the thyristor exposes under the light.
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