Abstract
Thin film dual select diodes (TF-DSDs) were fabricated at a low temperature (180 oC) for applications to pixel switching devices for flexible displays. The Silicon-rich silicon nitride (SRSN) films were prepared by catalytic chemical vapor deposition (Cat-CVD) technique. Composition of the source gas mixture affected directly the photoluminescence spectra and the current-voltage characteristics of the SRSN films. We observed non-linear, asymmetric current-voltage characteristics that can be tuned by controlling the film deposition parameters.
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