Abstract
We investigated the local atomic arrangements around In atoms of plasma-assisted molecular beam epitaxy (MBE) grown GaInNAs films using In K-edge extended X-ray absorption fine structure (EXAFS) oscillations. The obtained radial distribution function (RDF) clearly showed two peaks coming from the first nearest In–As bond and the second nearest In–cation bond. These two atomic distances were longer than the bond lengths theoretically calculated under an assumption of random distributions of Ga and In on cation sites and N and As on anion sites, respectively. It means that there are strong In–N and In–In correlations in GaInNAs films. The strong correlations suggest the formation of the InNAs-like particles, which can cause the spacially inhomogeneous emission.
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