Abstract
This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits. One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-semiconductor (CMOS) device IDT6116, the other is a two-stage circuit consisting of a bipolar power device L7805CV and the equivalent circuit of the parasitic P-N-P-N structure in bulk CMOS devices. The results show that the L7805CV’s output interruption after transient irradiation can prevent latch-up from occurring on the second stage circuit. The demanded minimum interruption duration to avoid latch-up varies with dose rate, and this is confirmed by the experimental results.
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