Abstract
Auger electron spectroscopy depth profiling was carried out on a Ge–Si multilayer structure using a rotated specimen and grazing incidence angle. Under these sputtering conditions the depth resolution is determined mainly by atomic mixing. The dependence of the experimentally measured depth resolution on incidence angle and energy was compared with the simulation results from a trim code. It was found that the trends of the dependencies were the same, but the trim absolute values were different.
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