Abstract
This work shows the study of the optical band gap of indium oxynitride (InNO) and indium nitride (InN) deposited by magnetron reactive sputtering. InNO shows multi-functionality in electrical and photonic applications, transparency in visible range, wide band gap, high resistivity and low leakage current. The deposition processes were performed in a magnetron sputtering system using a four-inches pure In (99.999%) target and nitrogen and oxygen as plasma gases. The pressure was kept constant at 1.33 Pa and the RF power (13.56 MHz) constant at 250 W. Three-inches diameter silicon wafer with 370 micrometer thickness and resistivity in the range of 10 ohm-centimeter was used as substrate. The thin films were analyzed by UV-Vis-NIR reflectance, photoluminescence (PL) and Hall Effect. The band gap was obtained from Tauc analysis of the reflectance spectra and photoluminescence. The band gap was evaluated for both films: for InNO the value was 2.48 eV and for InN, 1.52 eV. The relative quantities obtained from RBS spectra analysis in InNO sample are 48% O, 12% N, 40% In and in InN sample are 8% O, 65% N, 27% In.
Highlights
Indium nitride (InN) and alloys are materials with high potential for applications in optoelectronic devices due to their optical and electronic properties
The main objectives of this work were to calculate the influence of temperature in carrier density of indium oxynitride and to estimate the A0 constant for both semiconductors
The indium nitride (InN) and InNO band gaps were estimated for each sample from their reflectance spectra
Summary
Indium nitride (InN) and alloys are materials with high potential for applications in optoelectronic devices due to their optical and electronic properties. InN has a calculated band gap around 1.9 eV, in literature, it appears frequently between 0.7 and 0.9 eV1 for films deposited by MBE (molecular beam epitaxy). The narrow indium nitride (InN) band gap has generated great interest for applications such as high-efficiency solar cells, lightemitting diodes, laser diodes, and high-frequency transistors. When oxygen is added in InN thin film deposition, indium oxynitride thin film (InNO) is formed. This ternary alloy belongs to a new class of materials with optical, mechanical and electrical properties potentially interesting for industrial applications
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
