Abstract
Multifunctional materials are a new class of thin films and coatings. These materials show interesting characteristics for application in many scientific areas, in special electronic and photonic technologies. These characteristics include sensitivity for thermal, light, mechanical, chemical and other influences, high resistivity, high electrical isolation and transparence in visible range. Recently it was obtained a new oxide type that combines oxygen, nitrogen and indium: the indium oxynitride. In this work, we study the deposition of indium oxynitride by reactive sputtering for application in photoconductor sensors. The deposition processes were performed in a home build magnetron sputtering system, using a four-inch pure In target, nitrogen and oxygen as process gases. The pressure was kept constant at 10 mtorr and the RF power (13.56 MHz) was constant at 250 W. The photoconductors were made with these thin films. The photoelectric detectors were analyzed by IxV (current versus voltage) analyses. The IxV analysis presented a low leakage current (10-8 A). The photoelectric effect was observed from the difference between the case with emitted light and dark currents. It increased around 140 times, under illumination of a halogen lamp. The Hall Effect measurements indicated that the films were n-type semiconductors. The increase in the oxygen concentration added in the plasma, promoted the change in the character of these thin films from conductor to semiconductor material.
Highlights
The area of optoelectronics has seen substantial progress in recent years
The results obtained from the Hall effect measurements (Table 1) show in general that the resistivity of the InNO films deposited on Si is very high
The added oxygen forms the indium oxynitride thin film and establishes links with metallic indium, thereby decreasing the carrier concentration and leakage current, which promotes the increase of the photoelectric effect[8]
Summary
The area of optoelectronics has seen substantial progress in recent years. Especially with the discovery of new materials that can be used as light sensors. InNO is a semitransparent material of pale yellow color and has a wide band gap in the range 3.4-3.6 eV (nearest indium oxide), which makes it an excellent candidate to be employed in photo sensors in the ultraviolet region. It can be used as material for solar cells fabrication[3]. This ternary alloy belongs to a new class of materials with optical, mechanical and electrical properties which are potentially interesting for industrial applications[4]. Numerous properties of the InNO, such as the refractive index and the photoelectric effect intensity, vary according to the proportion of oxygen and nitrogen contained in the formed film
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