Abstract
AbstractIn this work we study the deposition of indium oxynitride prepared by reactive RF magnetron sputtering. This material shows multi‐functionality in electrical and photonic applications. It shows transparence in visible range, wide band gap, high resistivity, low linkage current and response for light. The deposition processes were performed in a home build magnetron sputtering system, using a four‐inch pure In (99.999%) target, nitrogen and oxygen as process gases. The pressure was kept constant in 1.33 Pa and the RF power (13.56 MHz) was constant 250 W. The optical band gap was estimated for samples deposited with 0%, 10%, 20%, 50%, 80% and 85% of oxygen concentration in the gas mixture and the band gap values obtained were 1.32 eV, 2.47 eV, 2.65 eV, 2.50 eV, 3.04 eV and 3.00 eV, respectively. The IxV analysis shows a low leakage current (∼10–8 A). The increase in the oxygen concentration in the plasma promotes change in the character of these thin films from conductor to semiconductor material (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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