Abstract
In the present paper, we propose a novel device structure by introducing a source field-plated AlGaN/GaN in the metal oxide Semiconductor high electron mobility transistors (MOS-HEMT) structure having a relatively short gate length and short gate-to-drain distances. The 2D breakdown analysis is performed using Sentaurus TCAD simulator. The effects of gate to drain distance (Lgd), source field plate length (Lfp) and passivation layer thickness (tp) on breakdown voltage (BV) is analyzed. The simulations are done using the drift–diffusion (DD) model, which is calibrated/validated with the previously published experimental results. The breakdown voltage is observed to increase with increase in Lfp and tp. Very high breakdown voltage of 752.8V is obtained by optimizing the Lfp to 3µm and tp to 200nm at a fixed gate to drain distance of 3.4µm. The results show a great potential application of the ultra-thin HfAlO source field plated AlGaN/GaN MOS-HEMT to deliver high currents and power densities in high power microwave technologies.
Published Version
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