Abstract
In this paper, a study has been carried out on a double gate MOSFET to evaluate its performance. The effect of electric field on the confinement of carries in the centre of the channel and carrier scattering concept has been depicted clearly. The study shows that the critical parameters like Subthreshold and DIBL can be greatly improved with the application of an additional gate in the traditional device. The Device was Simulated using Sentaurus TCAD and mathematical calculations were done using MATLAB and Origin Lab.
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