Study of Carrier Scattering and Quantization Effects in Steep Retrograded Double Gate FinFETs for Nano Technology Applications

Abstract

In this paper, a study has been carried out on aDouble Gate FinFET (DG-FinFET) to evaluate its performance. The effect of electric field on the confinement of carries in the centre of the channel and also effect on the velocity of electrons i.e. velocity saturation concept has been depicted clearly. The study shows that the critical parameters like Subthreshold and DIBL can be greatly improved and are found to be stable with applied drain bias with the application of an additional gate in the traditional device.