Abstract
The electronic states in PbSe/Pb0.934Sr0.066Se multiple-quantum-well structures (MQWs) grown by molecular-beam epitaxy have been investigated both theoretically and experimentally for the midinfrared laser applications. With the aid of combined temperature-dependent photoluminescence and absorption measurements on a Pb0.934Sr0.066Se thin film for the effective masses and temperature-dependent band gaps, we find that the PbSe/PbSrSe MQWs have type-I band alignment and the conduction band offset ratio is Qc=0.82±0.03. The calculation, taking into account the strain, carrier confinements, and the multivalley band structure, can well explain both the observed luminescence peak energies and the temperature coefficient of the luminescence peaks as a function of well thickness.
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