Abstract
The new current design is especially suitable for use in mu lti-standard wireless receiver fo r microwaves communicat ion systems. In recent years, there has been a growing market for dual band transceivers for various wireless standards. This work investigates a novel circuit topology of concurrent Dual-band Low No ise Amplifier (LNA) operates in the 3.9 GHz and 4.48 GHz frequency bands for WLAN applications and may be used for dual band cellular applications. RF circuit designs take two parallel LNAs with a single transistor only, and band-pass filter (BPF) networks are usually used match both the input and output ports at two different bands, are matched to 50Ω without external elements. The transistor ATF1 0136 is chosen for the purpose of high gain and low noise characteristics. Simulat ions of the operation of the amp lifier were performed with the software ADS and Ansoft software and performance of the amplifier were recorded and analyzed. Simulat ion results indicate a Noise Figure NF below 1.5dB and a gain S21 above 11 d B in all frequency bands and also input and output return loss are below -11 d B for all desired frequency band while drawing 2.5mA current fro m a 5V power supply. The chip provides a good basis for the realization of W LAN lo w-cost RF receivers for dual-band operation. These performances situate this receiver among the most competitive low cost and low power RF receivers. All the principles carry out in this work are furthermo re transposable to other frequencies and to other transmission standards.
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