A sub-1-dB NF±2.3-kV ESD-protected 900-MHz CMOS LNA

Abstract

A sub-1-dB noise figure HBM ESD-protected [-3 kV, 2.3 kV] low noise amplifier (LNA) has been integrated in a 0.35-/spl mu/m RF CMOS process with on-chip inductors. The sensitivity of the LNA performances to the spread of parasitics associated with package and bondwire has been attenuated by using an inductive on-chip source degeneration. At 920 MHz and P/sub dc/=8.6 mW, the LNA features: noise figure NF=1 dB, input return loss=-8.5 dB, output return loss=-27 dB, power gain G/sub p/=13 dB, input IIP3=-1.5 dBm. At a power dissipation of 5 mW and 17.6 mW, a NF respectively equal to 1.2 dB and 0.85 dB is measured. The CMOS LNA takes 12 pins of a TQFP48 package, an area of 1.0/spl times/0.66 mm/sup 2/ (bondwire pads excluded) and it is the first HBM ESD-protected [-3 kV, 2.3 kV] CMOS LNA to break the 1-dB NF barrier.