Abstract

In this paper, we proposed two 13 GHz low noise amplifiers (LNAs) structure with TSMC 0.18 µm RF CMOS process. A cascode two-stage LNA achieves 9.9 dB of power gain (S 21 ), 5.5 dB of the noise figure (NF), −32 dB of input return loss (S 11 ), −5.2 dB of output return loss (S 22 ), −8 dBm of the P 1dB , and 6.66 mW of power consumption at 13 GHz, while consuming 3.7 mA by 1.8 V supply. The second LNA is a three-stage cascade LNA. Measured results show that the input return loss is −15.45 dB, the output return loss is −9.47 dB, the power gain is 9.34 dB, the isolation is −30.364 dB, the NF is 4.76 dB, the total power consumption is 26.64 mW, unconditional stability, the P 1dB is −13 dBm, while consuming 14.8 mA by 1.8 V supply. The paper also discusses design considerations such as the effects of simulation, layout and circuit construction.

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