Study and Analysis of the Effects of SiGe Source and Pocket-Doped Channel on Sensing Performance of Dielectrically Modulated Tunnel FET-Based Biosensors

Abstract

Dielectrically modulated tunnel FET (DMTFET)-based biosensors show higher sensitivity but lower subthreshold current compared with their dielectrically modulated FET counterpart. In this context, the effect of use of silicon–germanium (SiGe) source and n+-pocket-doped channel is investigated with the help of extensive device-level simulations. This paper explores the underlying physics of germanium composition variation in the source region, and doping concentration variation in n+-pocket region, from the perspective of biomolecule conjugation. The effects of source bandgap and tunneling length over the band-to-band tunneling component have been analyzed, and, subsequently, the sensing performance of DMTFETs has been estimated. The results show that SiGe-source DMTFET has significant superiority over n+-pocket DMTFET for attaining higher subthreshold current level while retaining acceptable sensitivity. Such sensitivity-current optimization has been studied for different gate and drain biases, and the suitable biasing range of operation has been indicated. In addition, the relative efficiency of SiGe source and n+-pocket-doped channel has been studied under different biomolecule sample specifications. Finally, the influence of trap-assisted tunneling on DMTFET sensing performance has been analyzed, and the comparative role of SiGe source and n+ pocket has also been indicated in this context.