Abstract
Fast melting and solidification of semiconductors by use of Q-switched laser irradiation techniques has provided, during the last few years, a large amount of information on novel high speed crystal growth processes. Under the highest quench rate conditions, the motion of the final solidification interface can be so rapid (many metres per second) that atomic ordering processes are overwhelmed and either defective crystal or even the amorphous solid phase is formed. Most work in this area has been carried out on elemental Si and electron microscopy of solidification structures has played an essential analytical role through both conventional and high resolution imaging studies. The present paper will outline recent progress which has been made in understanding the crystallographic orientation dependence of high-speed growth phenomena.
Published Version
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