Abstract
Doped Bi 2 O 3 -ZnO-Nb 2 O 5 (BZN) cubic pyrochlore thin films are prepared on Pt/Ti/SiO 2 /Si(100) substrates by pulsed laser deposition process. Dielectric properties of BZN thin films can be tailored by doping. The thin films of pure BZN and BZN doped by Ti and Ca, as well as the BZN thin films with excessive Bi 2 O 3 and/or ZnO have been prepared. The structure, crystallinity and dielectric properties have been investigated. It's found that excessive Bi 2 O 3 and ZnO increase dielectric constant and also loss tangent. For the doped BZN thin films, A-site Ca-substitution (Bi 1.5 Zn 0.1 Ca 0.4 )Nb 1.5 O 7 films exhibit small dielectric constant of 129, while B-site Ti-substitution (Bi 1.5 Zn 0.5 ) (Nb 0.5 Ti 1.5 )O 7 thin films exhibit larger dielectric constant of 226.
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