Abstract
The cross-hatched morphology in ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As/GaAs strained-layer superlattices was shown by x-ray anomalous topography to be composed of edge-type dislocations running in two orthogonal 〈110〉 directions with their 1/2a〈110〉 Burgers vector in the (001) growth plane. A type of stereoscopic topograph showed that the misfit dislocations were located over the whole superlattice and were stacked in columns along the surface normal. Based on a series of experimental results a relaxed growth mechanism for ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As/GaAs superlattices is proposed.
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