Abstract
Thin heteroepitaxial layers were grown by liquid phase epitaxy (LPE) on (001)GaAs substrates. Individual misfit dislocations were imaged in X-ray topographs taken under conditions of anomalous transmission. An asymmetry in the character of the misfit dislocations, which were running in two orthogonal 〈110〉 directions in the (001) growth plane, was found to exist. In the [110] direction edge-type dislocations with their Burgers vector in the growth plane were observed. In the perpendicular [110] direction 60°-type dislocations with their Burgers vector inclined at 45° to the growth plane were visible. An X-ray method was used to distinguish the two non-equivalent 〈110〉 directions and was compared with well-known etching techniques.
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