Abstract
Structure evolution and electric properties of tantalum nitride ( TaN ) films deposited on Al 2 O 3-based ceramic and glass substrates by magnetron reactive sputtering were carried out as a function of the N 2-to- Ar flow ratio. The TaN thin films on Al 2 O 3-based ceramic substrates grow with micronclusters composed of numerous nanocrystallites, contains from single-phase of Ta 2 N grains to TaN , and exhibits high defect density, sheet resistance and negative TCR as the N 2-to- Ar flow ratio continuously increases. However, the films on the glass substrates grow in the way of sandwich close-stack, contains from single-phase of Ta 2 N grains to TaN and Ta 3 N 5 phases with the increase of N 2-to- Ar flow ratio. These results indicate that the N 2-to- Ar flow ratio and surface characteristic difference of substrates play a dominant effect on the structure and composition of the TaN films, resulting in different electrical properties for the films on Al 2 O 3-based ceramic and the samples on glass substrates.
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