Abstract
The structure changes in (111)-Si layers as a function of ion implantation parameters, pulsed nanosecond annealing and following thermal treatment conditions are investigated using transmission electron microscopy. The models of liquid phase epitaxy, secondary defect formation during pulsed annealing and dislocation generation during tetrahedron stacking fault annealing are proposed. Depending on the impurity supersaturation level and oxidation intensity the formation of two or three perfect dislocations may take place under a single tetrahedron stacking fault annealing. [Russian Text Ignored].
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Schedule a callMore From: Physica Status Solidi A-applications and Materials Science
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