Abstract
ABSTRACTRetention and bonding of nitrogen implanted into crystalline Si were examined by infrared absorption (ir) and transmission electron microscopy (TEM) after furnace and pulsed laser annealing. Localized Si-N vibrational modes for N-N pairs are observed, and the associated ir band intensities increase upon pulsed annealing. Furnace annealing above 600°C decreases the ir intensity for N-N pairs and fine structure defects appear in TEM. Subsequent laser annealing removes most of the fine structure and reactivates the pair spectrum which we interpret as dissolution of N precipitates and pair formation upon quenching from the melt. Any realistic model for N in Si must include the formation and consequences of N-N pairs.
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