Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module

Abstract

Silicon carbide (SiC) device has higher switching frequency, higher breakdown voltage, and lower on-state voltage drop, which makes it subversive potential in the high power density applications. However, the traditional packaging structure cannot cope with the high power density of SiC devices, so the existing commercial SiC power module can only be used in derating applications. This paper proposed a 3-D packaging design method for high power density MOSFET power module, in which the cooling system is integrated inside the module to reduce the thermal resistance and the temperature difference of the SiC MOSFET chips. At the same time, the heat dissipation process of the new structure is modeled and analyzed, and the accuracy of the model is proved by experiment and simulation.