SIC power devices in power electronics: An overview

Abstract

Silicon (Si) power devices have dominated the world of Power Electronics in the last years, and they have proven to be efficient in a wide range of applications. But high power, high frequency and high temperature applications require more than Si can deliver. With the advance of technology, Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices have evolved from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC and GaN devices have several compelling advantages: high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. This paper provides a general review on the properties of these materials comparing some performance between Si and SiC devices for typical power electronics applications. Based on studied information, line of progress and the current state of developing, SiC seems to be the most viable substitute in high power and high temperature applications in the mid-term of Si, due to the fact that the GaN is still used in a reduced number of applications.