Structure and properties of films grown on Si, Ta, Ti, Mo, W, and Ni substrates by reactive ion-beam sputtering

Abstract

Thin films are grown on Si, Ta, Ti, Mo, W, and Ni substrates by reactive ion-beam sputtering, and their structure, phase composition, and properties are studied. The films are found to consist of the nitride and oxide of the substrate metal, TiN, and randomly distributed TiO2 inclusions. All of the phases are polycrystalline. Si substrates are shown to have an epitaxial effect on the structure of the phases in the film. The films offer greater hardness, better adhesion, and higher corrosion resistance compared to those grown by ion implantation.