Abstract
Silicon oxycarbide (SiOC) films were prepared by reactive RF magnetron sputtering at room temperature with a SiC target, and deposition was carried out under various oxygen flow ratios. The Si–O chemical bonding in the SiOC films was evaluated by IR transmittance spectroscopy and X-ray photoelectron spectroscopy (XPS) measurement, and the composition of the SiOC film was determined by Rutherford backscattering spectroscopy (RBS) measurement. The carbon and oxygen content in the SiOC film decreased and increased, respectively, with increasing oxygen flow ratio. The optical properties of the film were determined by UV–visible transmittance spectroscopy and ellipsometry. The absorption edge shifted to a shorter wavelength and the refractive index decreased because of an increase in the oxygen content of the SiOC film.
Published Version
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