Abstract

Barium titanate (BT) thin films have been prepared on Pt∕Ti∕SiO2∕Si substrates through the use of a low temperature process. This technique combines the conventional sol-gel process and hydrothermal methods. X-ray diffraction analysis showed that the BT thin films had a pure perovskite structure. Au∕BT∕Pt capacitors have been fabricated and the dielectric properties have been discussed for SGHT-prepared BT films treated at 180 and 500°C, respectively. It was found that the BT films annealed at 500°C had much better ferroelectric properties. This improvement of ferroelectric properties through a heat treatment is probably associated with the change of density of hydroxyl groups in the films.

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