Abstract
Energy dispersive X-ray diffraction (EDXD) measurement on molten silicon has been carried out at three temperatures of 1693 K, 1733 K and 1768 K. Three structure factors of molten silicon show the characteristic shoulder on the higher-wave-vector side of the first peak. Amplitudes of the structure factors in the first and second peaks are smaller than those obtained by the angular dispersive X-ray diffraction (ADXD) method. The analysis of the distribution function (RDF) shows that the coordination number of the first two neighbors is 5.7(3.7+2.0) at 1693 K, 5.4(3.7+1.7) at 1733 K and 5.7(3.7+2.0) at 1768 K. These values suggest that the temperature dependence of the local atomic rearrangement is very weak in the temperature region investigated here.
Published Version
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