Abstract
Nanostructure porous silicon (NPSi) was achieved by electrochemical etching. A p-type silicon of resistivity (0.1-0.02 Ω.cm) and n-type silicon of resistivity (1.5-4 Ω.cm) were immersed in 25% HF at etching time of 15 min and fixed current density 20mA/cm2 . Moreover. A gold nanoparticles were produced by laser ablation of energy (250, 350 and 450 mJ). The AuNPs were deposited on PSi layer ending up with a AuNPs/PSi.The structural, morphology and Raman properties of the AuNPs/PSi were all investigated. Xray diffraction showed that the Au nanoparticles revealed a polycrystalline face-centered cubic structure (FCC). Furthermore, FESEM images displayed that the AuNPs have entered inside the pores with uniform sizes. Additionally, Raman spectrum showed shifting on the broadening peak below 520 cm-1 when laser energy is increased in p-type silicon. AuNPs plays crucial role and very effective to enhance this property.
Published Version
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