Abstract
β-Ga2O3 thin films were obtained by the sol-gel method on sapphire and quartz substrates, as well as on Cu-O buffer layers. It was shown that the sol-gel method allowed to obtain β-Ga2O3 thin films with good optical and structural properties by using X-ray diffraction, scanning electron microscopy and optical spectroscopy. The energy of the optical band gap of Ga2O3 films calculated by the Tauc plot varied from 4.39 to 4.59 eV.
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