Structural and optical properties of β-Ga2O3 thin films on sapphire

Abstract

We have successfully fabricated epitaxial β-Ga2O3 thin films on sapphire substrates. The RHEED observations have revealed that a layer-by-layer growth of Ga2O3 was achieved at optimized deposition conditions. The optical properties of the films were derived from measurements, at normal incidence, of transmittance and reflectance.