Abstract
In this study, β-Ga2O3 films were fabricated on a quartz substrate by the sol–gel method using different drying temperatures and solutions of different molar concentrations, and their structural, optical, and electrical properties were evaluated. The as-fabricated films exhibited a monoclinic β-Ga2O3 crystal structure, whose crystallinity and crystallite size increased with increasing molar concentration of the solutions used and increasing drying temperature. Scanning electron microscopy of the as-prepared samples revealed dense surface morphologies and that the thickness of the films also depended on the deposition conditions. The average transmittance of all the samples was above 8% in visible light, and the calculated optical bandgap energy was 4.9 eV. The resistivity measured using a 4-point probe system was 3.7 × 103 Ω cm.
Highlights
Wide-bandgap semiconductors exhibit excellent properties such as high breakdown field, high temperature stability, and high thermal conductivity
Β-Ga2O3 films have been investigated for applications in power semiconductors
These patterns confirmed that β-Ga2O3 films were successfully formed without any impurities by the Coatings 2021, 11, x FOR PEER REVIEsoWl–gel process
Summary
Wide-bandgap semiconductors exhibit excellent properties such as high breakdown field, high temperature stability, and high thermal conductivity. The three‐dimensional (3D) AFM images of the β‐ Ga2O3 thin films fabricated under different experimental conditions (Figure 5) showed that all samples possessed flat surface morphologies, and sample A had a low RMS rough‐. Ga2O3 thin films fabricated under different experimental conditions (Figure 5) showed that all samples possessed flat surface morphologies, and sample A had a low RMS roughness value of 0.2 nm. For samples A, D, and G (molar concentration = 0.5 M), the RMS roughness of the thin film increased with increasing gs 2021, 11, x FOR PEER REVIEW drying temperature.
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