Abstract
ABSTRACT In this work, ZnS0.2Se0.8 thin films doped with Fe of various concentrations were spray deposited to investigate the influence of Fe doping concentration on the most significative structural, morphological, optical and electrical properties. An X-ray diffraction study showed that all films were polycrystalline and had a cubic zinc blende crystal structure. SEM showed that the Fe-doped ZnS0.2Se0.8 thin films had a spherical-like structure with agglomeration of grains and that their particle size was slightly increased. EDAX confirmed that the ZnS0.2Se0.8 lattice was doped with Fe. An optical study indicated that there was a direct allowed type transition. The band gap of ZnS0.2Se0.8 thin films sharply increased to 3.25 eV with Fe doping upto 0.2 mol% and then gradually decreased with increasing Fe doping concentration. DC electrical resistivity measurements confirmed that the films were semiconducting; with a minimum resistivity of 0.617 × 105 Ω-cm. Hall Effect and thermoelectric power measurements confirmed n-type conductivity.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
