Abstract
The melt quenching and thermal evaporation techniques were used to produce the chalcogenide glass Ge18Bi4Se78 powder and thin film samples, respectively. The as-deposited and annealed thin films at (180, 200, 300, 320 °C) are characterized by X-ray diffractometer and scanning electron microscopy. The Urbach tail energy Eu and the optical energy gap Eop are investigated. As well, the Swanepoel method revealed that the refractive index exhibited normal dispersion behavior. In addition, the single oscillator, dispersion energies, the lattice dielectric constant, εL, plasma frequency, ωp, and optical conductivity, σop were all examined. The electrical conductivity and the activation energies for as-deposited and annealed thin films were calculated. Whereas the J-E properties of the as-deposited and annealed films indicated varied ranges of negative differential conductance NDC depending on the annealing temperatures.
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