Abstract
Abstract The family of Co-based Heusler compounds holds considerable promise for spintronic applications due to their theoretically half-metallic magnetic nature. In this work, we have studied the structural and transport behaviour of Mn₂CoSi (MCS) inverse Heusler alloy (HA) experimentally in thin film form. Structural analysis have revealed the formation of a cubic structure corresponding to the inverse HA MCS with space group F4 ̅3m. Fitting results of the X-ray reflectivity (XRR) spectrum indicated that the deposited film is uniform and smooth, with a thickness of 70 nm. Simulation results from Rutherford backscattering spectrometry (RBS) experiments revealed that the film is pure and devoid of foreign elements such as oxygen or nitrogen, with a composition of Mn₂CoSi. Electrical transport study of MCS has shown the thin film structure has been done using vander pauw technique, suggesting the ohmic nature of the prepared thin film structure at RT. Moreover, the estimated conductivity, carrier concentration and carrier mobility from Hall measurement are found to be 5361 S/cm, 1021 cm-3 and 25 cm2/V.s. which is consistent with the observations reported for half-metallic materials. Surface morphology indicated that the film is smooth, with an average grain size of 38 nm. The possibility of half-metallicity of MCS HA in thin film form makes it a promising candidate for its future applications in silicon-based device applications.
Published Version
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