Abstract
In a series of Si/SiGe superlattices grown on (113) oriented Si substrates step bunches are formed during growth of the multilayers. X-ray reflectivity, atomic force microscopy, and transmission electron microscopy have been used to structurally characterize the samples. A highly regular terrace structure, which is modulated by a long-range waviness of the interfaces has been revealed. Reciprocal space maps around the (000) reciprocal lattice point exhibit an S-shaped structure of resonant diffuse scattering sheets.
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