Structural investigation of light-emitting A3B5 structures grown on Ge/Si(100) substrate

Abstract

In this paper we have investigated light-emitting diodes based on GaAs/InGaAs heterostructures grown on a Ge/Si(100) substrates. Ge layers were deposited by the “hot wire” method, and A3B5 layers were grown by the low pressure MOCVD. Structures were investigated by the methods of electroluminescence spectroscopy and electron beam induced currentimaging in a scanning electron microscope. Technological ways to improve crystalline quality of active region of light-emitting structures grown on Ge/Si(100) substrate were shown.