Abstract
(fa181-1) and low-angle tilt grain boundaries in GaAs thin films were investigated by high-resolution transmission electron microscopy (HRTEM). Models for the atomic structure of the boundaries are proposed in this study. The structural unit for the boundaries consists of 5- and 7-member rings. The polarity of the grain on either side of the boundaries was confirmed by the convergent beam electron diffraction method. (110) low-angle tilt grain boundaries were observed to consist of a/2 edge dislocations. Anti-site type bonds are present at the core of the dislocations.
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