Abstract

The Ohno process was applied to produce Al-lwt.% Si alloy rods for semiconductor devices. The casting conditions which enable production of an 8mm diameter rod having a mirror surface with a highly longitudinally oriented microstmcture was established. It was demonstrated that the alloy could be drawn, without the need of intermediate recrystallization or stress relief, to produce wires of 0.14 to 0.10mm in diameter. The rela-tionships between the casting conditions and wire breakage during fine wire drawing were also studied.

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