Structural, electrical and optical properties of SnO 2 films deposited on Y-stabilized ZrO 2 (1 0 0) substrates by MOCVD

Abstract

SnO 2 films have been deposited on Y-stabilized ZrO 2 (YSZ) (1 0 0) substrates at different substrate temperatures (500–800 °C) by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of the films have been investigated. The films deposited at 500 and 600 °C are epitaxial SnO 2 films with orthorhombic columbite structure, and the HRTEM analysis shows a clear epitaxial relationship of columbite SnO 2(1 0 0)||YSZ(1 0 0). The films deposited at 700 and 800 °C have mixed-phase structures of rutile and columbite SnO 2. The carrier concentration of the films is in the range from 1.15×10 19 to 2.68×10 19 cm −3, and the resistivity is from 2.48×10 −2 to 1.16×10 −2 Ω cm. The absolute average transmittance of the films in the visible range exceeds 90%. The band gap of the obtained SnO 2 films is about 3.75–3.87 eV.