Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

Abstract

Epitaxial In2O3 films have been deposited on Y-stabilized ZrO2 (YSZ) (100) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450–750°C). The film deposited at 650°C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In2O3(100)||YSZ(100) with In2O3[001]||YSZ[001]. The Hall mobility of the single-crystalline In2O3 film deposited at 650°C is as high as 66.5cm2V−1s−1 with carrier concentration of 1.5×1019cm−3 and resistivity of 6.3×10−3Ωcm. The absolute average transmittance of the obtained films in the visible range exceeds 95%.