Abstract
Chemical and structural characteristics of GexC1-x films grown by metalorganic chemical vapour deposition are examined. The effects of the precursor nature (tetravinyl- or tetraethylgermane), growth temperature (in the 500-580°C range) and carrier gas (He or H2) are analysed using electron microprobe, X-ray diffraction, X-ray photoelectron, infrared and Raman spectroscopies. The film structure is governed by the growth conditions. It evolves between two border-line cases: An amorphous-like Ge phase embedded in a graphitic matrix and a polycrystalline Ge phase. A comparative study of the average grain size deduced from X-ray diffraction and Raman scattering data is presented.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
