Abstract
CdTe solar cells were fabricated by depositing CdTe films on CdS/SnO2/glass substrates using close‐spaced sublimation (CSS) and metalorganic chemical vapor deposition (MOCVD). Te/Cd mole ratio was varied in the range of 0.02 to 6 in the MOCVD growth ambient in an attempt to vary the native defect concentration. Polycrystalline CdTe layers grown by MOCVD and CSS both showed average grain size of about 2 μm. However, the CdTe films grown by CSS were found to be less faceted and more dense compared to the CdTe grown by MOCVD. CdTe growth techniques and conditions had a significant impact on the electrical characteristics of the cells. The CdTe solar cells grown by MOCVD in the Te‐rich growth condition and by the CSS technique gave high cell efficiencies of 11.5% and 12.4%, respectively, compared to 6.6% efficient MOCVD cells grown in Cd‐rich conditions. This large difference in efficiency is explained on the basis of (a) XRD measurements which showed a higher degree of atomic interdiffusion at the CdS/CdTe i...
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