Abstract
We report on the structural characterization of ZnTe, CdTe and Cd 1− x Zn x Te epilayers grown on GaAs(1 0 0) by isothermal closed space sublimation epitaxy. A detailed study of the heterostructures based on conventional Rutherford backscattering spectrometry, ion channeling and nuclear reaction analysis allows to determine the thickness, composition, impurities, lateral homogeneity and interface structure of the grown thin films. The growth rates were determined for the extreme composition (ZnTe, CdTe). Stoichiometry and lateral homogeneity were observed in ZnTe and CdTe films. Low carbon contamination homogeneously distributed in the film was present and no oxygen contamination of the samples was observed. The channeling analysis of ZnTe films allowed to evaluate the thickness of the interface damaged region.
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