Chapter 9 Hydrogen in Semiconductors: Ion Beam Techniques

Abstract

This chapter describes the application of ion beam techniques for the study of hydrogen (H) in semiconductors. Ion beam techniques offer a wide variety of possibilities for the study of hydrogen in materials. The chapter discusses nuclear reaction analysis and scattering techniques and describes some of their applications. Ion-beam techniques can be grouped into the following two categories, depending upon the information they provide: (1) compositional analysis and (2) positional analysis. In the first category are techniques that provide depth profiles of impurities. The discussion of this category in the chapter emphasizes on high-energy ion beam techniques, such as nuclear reaction analysis and elastic recoil detection, with a brief review of (lower-energy) secondary ion mass spectrometry. Positional analysis uses ion channeling of MeV light ions (for example, helium) to probe the lattice location of impurities. The importance of measurement simulation and microscopic modeling for the precise determination of lattice location is described in the chapter.