Abstract
The early deposition stages of diamond films have been studied in detail as a function of growth time, using electron spin resonance methods. The defect center in the non-diamond phase carbon region ( g = 2.003, ΔH pp = 8–14 Oe was observed from a sample deposited for 10 min. The defect center in the diamond layer ( g = 2.003, ΔH pp = 3–5 Oe) was observed together with the defect center in non-diamond phase carbon after 20 min of growth time, and the intensity of the defect center in the diamond layer increased gradually with prolonged deposition time. Moreover, the relationship between defect structures and electrical resistance of the diamond film was discussed.
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