Abstract
The defect structures in ion implanted diamond films have been studied by the electron spin resonance (ESR) method. Two kinds of paramagnetic defect centers were observed in ion implanted layers. One was a carbon dangling bond that existed in crystalline diamond ( g = 2.003, ΔH pp = 3 Oe), and the other was a carbon dangling bond in an amorphous region of the films ( g = 2.003, ΔH pp = 2.6–20 Oe). The defect density in ion implanted layers decreased drastically at annealing temperatures over 400°C, but it remained stable even after annealing at 1000°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
